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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES * Low cost * High power gain. DESCRIPTION Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81. PINNING PIN 1 2 3 DESCRIPTION collector emitter base page MPSH10 1 2 3 MSB033 Marking code: PSH10. Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot Tj hFE Cre Crb fT rbCc Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts = 25 C; note 1 open base open collector CONDITIONS open emitter MIN. - - - - - -65 - MAX. 30 25 3 40 1 +150 150 UNIT V V V mA W C C PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation junction temperature DC current gain collector-base feedback capacitance transition frequency collector-base time constant VCE = 10 V; IC = 4 mA VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz open base open collector Ts = 25 C; note 1 CONDITIONS open emitter MIN. - - - - - 60 - 0.35 650 - MAX. 30 25 3 1 150 - 0.7 0.65 - 9 pF pF MHz ps V V V W C UNIT 1998 Aug 27 2 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS note 1 MPSH10 VALUE 125 250 UNIT K/W K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEon ICBO IEBO hFE Cre Crb fT rbCc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant CONDITIONS open emitter; IC = 100 A; IE = 0 open base; IC = 1 mA; IB = 0 open collector; IE = 10 A; IC = 0 IC = 4 mA; IB = 0.4 mA VCE = 10 V; IC = 4 mA VCB = 25 V; IE = 0 VCB = 25 V; IC = 0 VCE = 10 V; IC = 4 mA VCB = 10 V; IE = ie = 0; f = 1 MHz VCB = 10 V; IC = ic = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C VCB = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C MIN. 30 25 3 - - - - 60 - 0.35 650 - MAX. - - - 0.5 0.95 100 100 - 0.7 0.65 - 9 pF pF MHz ps UNIT V V V V V nA nA 1998 Aug 27 3 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MPSH10 handbook, halfpage 100 Y11 MRA154 handbook, halfpage -10 b11 MRA156 (mS) 80 g11 60 -b11 40 (mS) -20 -30 1000 MHz -40 700 400 20 -50 200 100 0 102 f (MHz) 103 -60 0 20 40 60 80 100 g11 (mS) VCB = 10 V; IC = 4 mA. Fig.2 Common base input admittance (Y11) as a function of frequency. VCB = 10 V; IC = 4 mA. Fig.3 Common base input admittance (Y11). handbook, halfpage 70 MRA155 Y21 (mS) handbook, halfpage 60 b21 MRA157 200 400 600 700 b21 (mS) 50 100 50 30 -g21 40 10 30 1000 MHz -10 20 -30 102 f (MHz) 103 10 -70 -50 -30 -10 10 30 g21 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.4 Common base forward transfer admittance (Y21) as a function of frequency. Fig.5 Common base forward transfer admittance (Y21). 1998 Aug 27 4 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MPSH10 handbook, halfpage 5 MRA150 Y12 (mS) handbook, halfpage 0 MRA152 b12 (mS) 100 200 400 4 -1 3 -2 700 2 -b12 -3 1000 MHz 1 g12 f (MHz) 103 -4 0 102 -5 -2 -1.2 -0.4 0.4 1.2 2 g12 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.6 Common base reverse transfer admittance (Y12) as a function of frequency. Fig.7 Common base reverse transfer admittance (Y12). handbook, halfpage 10 MRA151 Y22 (mS) handbook, halfpage 10 MRA153 b22 (mS) 1000 MHz 8 8 700 MHz 6 b22 4 6 4 400 MHz 200 MHz 2 g22 0 102 0 0 2 4 6 8 10 g22 (mS) 2 100 MHz f (MHz) 103 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.8 Common base reverse admittance (Y22) as a function of frequency. Fig.9 Common base reverse admittance (Y22). 1998 Aug 27 5 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads MPSH10 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Aug 27 6 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values MPSH10 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 27 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp8 Date of release: 1998 Aug 27 Document order number: 9397 750 04297 |
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